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See Technical Specifications

STP15N80K5

N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-220 package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STP15N80K5
Datasheet:

STP15N80K5 Datasheet (PDF)
Series:

SuperMESH5™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

800 V
EDA/CAD Models:

Request Free CAD Models for STP15N80K5

Email: [email protected]

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Tel: +852 95804164

STP15N80K5 General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

Industry’s lowest R_DS(on)x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	SuperMESH5™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V	Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	375mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
FET Feature	-	Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	STP15