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STGYA120M65DF2AG

IGBT Trench Field Stop 650 V 160 A 625 W Through Hole MAX247™

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

STGYA120M65DF2AG General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key Features

  • AEC-Q101 qualified
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tube
Temperature (°C) min -55 Temperature (°C) max 175

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
Z
Z**r 10/16/2023

Went long, works well

5
N
N**s 06/26/2023

To perm it was 49 days, the price is 25₽.

2
D
D**n 03/08/2022

You must improve the shipping package, i had a bit of a rele bent by not being in a small box instead of an envelope.

4

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