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STGW40N120KD

High-voltage IGBT transistors capable of handling 40 A of current

Manufacturer:

Stmicroelectronics
Mfr.Part #:

STGW40N120KD
Datasheet:

STGW40N120KD Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Collector- Emitter Voltage VCEO Max:

1.2 kV
Collector-Emitter Saturation Voltage:

2.8 V
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STGW40N120KD General Description

The STGW40N120KD is a high power N-channel IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 1200V and a current rating of 40A. This device is designed for use in high power applications such as motor control, welding equipment, and renewable energy systems.The STGW40N120KD features a low on-state voltage drop and a fast switching speed, making it ideal for high frequency switching applications. It also has a rugged design that allows it to withstand high currents and temperatures, making it suitable for use in harsh environments.This IGBT is housed in a TO-247 package, which provides good thermal performance and high power dissipation capabilities. It also has an integrated soft recovery diode, which helps to reduce switching losses and improve efficiency in power conversion applications.

Key Features

1200V VDS
2.3V VGS
40A ID
175°C maximum operating junction temperature
Low gate charge
High avalanche ruggedness
Enhanced body diode
Applications in PFC, UPS, solar inverters, and welding

Application

Industrial motor control
Switched-mode power supplies
Renewable energy systems
High-frequency inverters
Induction heating systems
Welding equipment
Solar inverters
Electric vehicle charging systems
Uninterruptible power supplies (UPS)
Medical equipment

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	2.8 V	Maximum Gate Emitter Voltage	- 25 V, + 25 V
Continuous Collector Current at 25 C	80 A	Pd - Power Dissipation	240 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 125 C
Series	STGW40N120KD	Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Unit Weight	0.229281 oz

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Ratings and Reviews

L**e 12/22/2021

The order came quickly enough. Well packed, safe and sound. While on checked the performance, but literally the other day such an opportunity will be presented.