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STGP8NC60KD

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

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STGP8NC60KD General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

stgp8nc60kd

Key Features

  • Lower on voltage drop (VCE(sat))
  • Very soft ultra fast recovery antiparallel diode
  • Lower CRES / CIES ratio (no cross-conduction susceptibility)
  • Short circuit withstand time 10µs

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tube
Temperature (°C) min -55 Temperature (°C) max 150
Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 15 A
Pd - Power Dissipation 65 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series STGP8NC60KD
Continuous Collector Current Ic Max 7 A Height 9.15 mm
Length 10.4 mm Product Type IGBT Transistors
Factory Pack Quantity 1000 Subcategory IGBTs
Width 4.6 mm Unit Weight 0.211644 oz

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Ratings and Reviews

More
G
G**n 08/01/2023

It came, but not yet. View quality board

1
L
L**n 04/24/2023

Everything is good, already with a dozen leds soldered into damaged lamps, everything is good, especially for such a price

19
B
B**g 07/10/2022

Professional. Shipped good parts at a solid price. Thank you for everything.

2
L
L**y 06/07/2022

Track is correct. Corresponds to the description. Didn't check.

6

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