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STGD5H60DF

Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Manufacturer:

ST
Mfr.Part #:

STGD5H60DF
Datasheet:

STGD5H60DF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for STGD5H60DF

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STGD5H60DF General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

High-speed switching
Tight parameter distribution
Safe paralleling
Low thermal resistance
Short-circuit rated
Ultrafast soft recovery antiparallel diode

Specifications

Source Content uid	STGD5H60DF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Additional Feature	BULK: 1000
Case Connection	COLLECTOR	Collector Current-Max (IC)	10 A
Collector-Emitter Voltage-Max	600 V	Configuration	SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	6.9 V	Gate-Emitter Voltage-Max	20 V
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
Number of Elements	1	Number of Terminals	2
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	83 W	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	280 ns
Turn-on Time-Nom (ton)	39 ns	VCEsat-Max	1.95 V