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STGB30H60DFB
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
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Manufacturer:
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Mfr.Part #:
STGB30H60DFB
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Datasheet:
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ECCN (US):
EAR99
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ECCN (EU):
NEC
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Packing Type:
Tape and Reel
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Temperature (°C) min:
-55
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EDA/CAD Models:
Availability: 4961 PCS
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STGB30H60DFB General Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Specifications
Marketing Status | Active | ECCN (US) | EAR99 |
ECCN (EU) | NEC | Packing Type | Tape and Reel |
Temperature (°C) min | -55 | Temperature (°C) max | 175 |
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.55 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 60 A |
Pd - Power Dissipation | 260 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | STGB30H60DFB |
Continuous Collector Current Ic Max | 60 A | Gate-Emitter Leakage Current | +/- 250 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 1000 |
Subcategory | IGBTs | Unit Weight | 0.048678 oz |
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Availability: 4961 PCS
+BOMQty. | Unit Price | Ext. Price |
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