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STGB30H60DFB

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

STGB30H60DFB General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STMicroelectronics, Inc Inventory

Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tape and Reel
Temperature (°C) min -55 Temperature (°C) max 175
Product Category IGBT Transistors Technology Si
Mounting Style SMD/SMT Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.55 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 260 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series STGB30H60DFB
Continuous Collector Current Ic Max 60 A Gate-Emitter Leakage Current +/- 250 nA
Product Type IGBT Transistors Factory Pack Quantity 1000
Subcategory IGBTs Unit Weight 0.048678 oz

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Avaq delivered on all fronts – the BD9D300MUV-E2 components were genuine and brand new. Their attention to detail and commitment to providing top-notch service sets them apart from other distributors. Highly recommended!

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