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STGB20NB41LZ

Trans IGBT Chip N-CH 382V 40A 200mW 3-Pin(2+Tab) D2PAK

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

STGB20NB41LZ General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

STMicroelectronics, IncMicrosoft.AspNetCore.Mvc.Localization.LocalizedHtmlString

Key Features

  • HIGH VOLTAGE CLAMPING FEATURE
  • POLYSILICON GATE VOLTAGE DRIVEN
  • LOW ON-VOLTAGE DROP
  • LOW THRESHOLD VOLTAGE
  • HIGH CURRENT CAPABILITY
  • LOW GATE CHARGE
STMicroelectronics, IncMicrosoft.AspNetCore.Mvc.Localization.LocalizedHtmlString
STMicroelectronics, IncMicrosoft.AspNetCore.Mvc.Localization.LocalizedHtmlString

Specifications

place launch_date Oct 1, 2003
last_inspection_date 03 MAY 2023 supplier_cage_code SCR76
htsusa schedule_b 8541290080
ppap False aec

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