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STF15N95K5

N-channel 950 V, 0.41 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP package

Manufacturer:

ST
Mfr.Part #:

STF15N95K5
Datasheet:

STF15N95K5 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for STF15N95K5

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

STF15N95K5 General Description

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.

Key Features

TO-220 worldwide best RDS(on)
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected

Application

SWITCHING

Specifications

Source Content uid	STF15N95K5	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	124 mJ
Case Connection	ISOLATED	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	950 V	Drain Current-Max (ID)	12 A
Drain-source On Resistance-Max	0.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	1 pF	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	30 W	Pulsed Drain Current-Max (IDM)	48 A
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON