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See Technical Specifications

STF10LN80K5

N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package

Manufacturer:

STMicroelectronics
Mfr.Part #:

STF10LN80K5
Datasheet:

STF10LN80K5 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for STF10LN80K5

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STF10LN80K5 General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

Industry’s lowest R_DS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	800 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	630 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	15 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	25 W
Channel Mode	Enhancement	Tradename	MDmesh
Series	STF10LN80K5	Configuration	Single
Fall Time	13 ns	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	28 ns	Typical Turn-On Delay Time	11.8 ns
Unit Weight	0.068784 oz