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See Technical Specifications

STD86N3LH5

Automotive-grade N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET H5 Power MOSFET in a DPAK package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STD86N3LH5
Datasheet:

STD86N3LH5 Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tape and Reel
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for STD86N3LH5

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STD86N3LH5 General Description

Mosfet, Aec-Q101, N-Ch, 30V, To-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Stmicroelectronics STD86N3LH5

Key Features

Designed for automotive applications and AEC-Q101 qualified
Low on-resistance R_DS(on)
High avalanche ruggedness
Low gate drive power losses

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tape and Reel
Temperature (°C) min	-	Temperature (°C) max	-
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	80 A	Rds On - Drain-Source Resistance	5 mOhms
Vgs - Gate-Source Voltage	- 22 V, + 22 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	14 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	70 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Series	STD86N3LH5	Configuration	Single
Fall Time	10.8 ns	Height	2.4 mm
Length	6.6 mm	Product Type	MOSFET
Rise Time	14 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23.6 ns	Typical Turn-On Delay Time	6 ns
Width	6.2 mm	Unit Weight	0.011640 oz