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See Technical Specifications

STD5NM50T4 +BOM

Power Field-Effect Transistor, 7.5A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Manufacturer:

ST
Mfr.Part #:

STD5NM50T4
Datasheet:

STD5NM50T4 Datasheet (PDF)
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STD5NM50T4

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STD5NM50T4 General Description

MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 7.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 30A; Termination Type: Surface Mount Device; Voltage Vds: 500V; Voltage Vds Typ: 500V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V

Key Features

0.7R RDS (ON)
High dV/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Tight process control and high manufacturing yields

Application

Power Management
Industrial

Specifications

Source Content uid	STD5NM50T4	Part Life Cycle Code	Not Recommended
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	300 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	7.5 A
Drain-source On Resistance-Max	0.8 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	50 W	Pulsed Drain Current-Max (IDM)	30 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON