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STD4NK60ZT4

N-Channel 600 V 4A (Tc) 70W (Tc) Surface Mount DPAK

Manufacturer:

ST
Mfr.Part #:

STD4NK60ZT4
Datasheet:

STD4NK60ZT4 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STD4NK60ZT4

Email: [email protected]

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Tel: +852 95804164

STD4NK60ZT4 General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Key Features

Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Zener-protected

Application

SWITCHING

Specifications

Source Content uid	STD4NK60ZT4	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	50 Weeks
Avalanche Energy Rating (Eas)	120 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	4 A
Drain-source On Resistance-Max	2 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	70 W	Pulsed Drain Current-Max (IDM)	16 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON