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STD4NK50Z-1 +BOM

STD4NK50Z-1 - N-channel 500 V, 2.2 Ohm typ., 3 A SuperMESH Power MOSFETs in IPAK package, STD4NK50Z-1, STMicroelectronics

Manufacturer:

STMicroelectronics
Mfr.Part #:

STD4NK50Z-1
Datasheet:

STD4NK50Z-1 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for STD4NK50Z-1

Email: [email protected]

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Tel: +852 95804164

STD4NK50Z-1 General Description

Extremely high dv/dt capability100% avalanche testedGate charge minimizedVery low intrinsic capacitanceZener-protectedSTD4NK50Z-1 PSpice model (.lib)STD4NK50Z-1 PSpice model (.lib)1.0

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	3 A	Rds On - Drain-Source Resistance	2.7 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	45 W
Channel Mode	Enhancement	Tradename	SuperMESH
Series	STD4NK50Z-1	Configuration	Single
Fall Time	11 ns	Height	6.2 mm
Length	6.6 mm	Product Type	MOSFET
Rise Time	7 ns	Factory Pack Quantity	75
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	21 ns	Typical Turn-On Delay Time	10 ns
Width	2.4 mm	Unit Weight	0.011993 oz