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STD45P4LLF6AG

Automotive-grade P-channel -40 V, 12 mOhm typ., -50 A STripFET F6 Power MOSFET in a DPAK package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STD45P4LLF6AG
Datasheet:

STD45P4LLF6AG Datasheet (PDF)
Series:

Automotive, AEC-Q101, STripFET™ F6
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

40 V
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STD45P4LLF6AG General Description

MOSFET, AECQ101, P-CH, -40V, -50A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -50A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 58W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: STripFET F6 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Key Features

Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101, STripFET™ F6
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	65.5 nC @ 10 V
Vgs (Max)	±18V	Input Capacitance (Ciss) (Max) @ Vds	3525 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	58W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	STD45