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See Technical Specifications

STD15NF10T4 +BOM

N-channel 100 V, 0.06 Ohm typ., 23 A StripFET II Power MOSFET in a DPAK package

Manufacturer:

ST
Mfr.Part #:

STD15NF10T4
Datasheet:

STD15NF10T4 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STD15NF10T4

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STD15NF10T4 General Description

MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 23A; On State resistance @ Vgs = 10V: 65mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V

Key Features

Exceptional dv/dt capability
100% avalanche tested
Low gate charge

Application

SWITCHING

Specifications

Source Content uid	STD15NF10T4	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Avalanche Energy Rating (Eas)	75 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	15 A	Drain-source On Resistance-Max	0.08 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	70 W
Pulsed Drain Current-Max (IDM)	60 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON