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SST39SF010A-55-4I-WHE

1Mb 4.5-5.5V Parallel Flash.

SST39SF010A-55-4I-WHE General Description

The SST39SF010A is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

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Key Features

    • Organized as 128K x8 / 256K x8 / 512K x8
    • Single 4.5-5.5V Read and Write Operations
    • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
    • Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)
    • Sector-Erase Capability– Uniform 4 KByte sectors
    • Fast Read Access Time:– 55 ns– 70 ns
    • Latched Address and Data
    • Automatic Write Timing– Internal VPP Generation
    • Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040
    • End-of-Write Detection– Toggle Bit– Data# Polling
    • TTL I/O Compatibility
    • JEDEC Standard– Flash EEPROM Pinouts and command sets
    • Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP
    • All devices are RoHS compliant
    • All non-Pb (lead-free) devices are RoHS compliant
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Specifications

Category Integrated Circuits (ICs)MemoryMemory Series SST39 MPF™
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH Memory Size 1Mbit
Memory Organization 128K x 8 Memory Interface Parallel
Write Cycle Time - Word, Page 20µs Access Time 55 ns
Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount Base Product Number SST39SF010

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Availability: 5596 PCS

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