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See Technical Specifications

SSM6N57NU

Trans MOSFET N-CH 30V 4A 6-Pin UDFN EP

Manufacturer:

TOSHIBA
Mfr.Part #:

SSM6N57NU
Datasheet:

SSM6N57NU Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
Drain to Source Voltage (Vdss):

30V
Current - Continuous Drain (Id) @ 25°C:

4A
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SSM6N57NU General Description

The SSM6N57NU is an N-channel MOSFET designed for high-performance switching applications in various electronic circuits. It offers low on-resistance, fast switching speed, and high current handling capabilities.

Key Features

N-Channel MOSFET: The SSM6N57NU is an N-channel MOSFET, which is a type of field-effect transistor that uses a metal-oxide-semiconductor structure to control the flow of current.
Low On-Resistance: The MOSFET offers low on-resistance, minimizing power loss and improving efficiency during conduction.
Fast Switching Speed: The MOSFET exhibits fast switching speeds, allowing for quick transition between conducting and non-conducting states.
High Current Handling: The component is designed to handle relatively high currents, making it suitable for high-power applications.
Small Package: The SSM6N57NU is typically available in a compact surface-mount package, facilitating easy integration into various circuit designs.

Application

Power Supplies
Motor Drives
Power Converters

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	-
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	-	Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A	Rds On (Max) @ Id, Vgs	46mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 10V	Power - Max	1W
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SSM6N57