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See Technical Specifications

SQS460EN-T1_GE3

AEC-Q101 Compliant

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SQS460EN-T1_GE3
Datasheet:

SQS460EN-T1_GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SQS460EN-T1_GE3

Email: [email protected]

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SQS460EN-T1_GE3 General Description

Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Key Features

TrenchFET® power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Application

Power rectification: commonly used to convert alternating current (AC) to direct current (DC) in power supplies.
Voltage clamping: protects sensitive electronic components from transient voltage spikes or ESD events.
Flyback diode: used in inductive load circuits to suppress voltage spikes when the current is interrupted.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	36 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	13 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	39 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	TrenchFET	Series	SQ
Configuration	Single	Fall Time	8 ns
Forward Transconductance - Min	16 S	Height	1.04 mm
Length	3.3 mm	Product Type	MOSFET
Rise Time	8 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	19 ns	Typical Turn-On Delay Time	5 ns
Width	3.3 mm	Part # Aliases	SQS460EN-T1_BE3
Unit Weight	0.032487 oz