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SPW20N60C3FKSA1
N-Channel 650 V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3-1
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Manufacturer:
Infineon Technologies
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Mfr.Part #:
SPW20N60C3FKSA1
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Datasheet:
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Series:
CoolMOS™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650 V
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EDA/CAD Models:
Availability: 5387 PCS
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SPW20N60C3FKSA1 General Description
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
Specifications
Series | CoolMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V | Vgs(th) (Max) @ Id | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V | Power Dissipation (Max) | 208W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | SPW20N60 |
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Availability: 5387 PCS
+BOMQty. | Unit Price | Ext. Price |
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