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SPP80N06S2-05

Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220

SPP80N06S2-05 General Description

Power Field-Effect Transistor, 80A I(D), 55V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Specifications

Series OptiMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6790 pF @ 25 V Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number SPP80N

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