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SPP04N60C3

MOSFET N-Ch 650V 4.5A TO220-3 CoolMOS C3

SPP04N60C3 General Description

Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Specifications

Source Content uid SPP04N60C3 Pbfree Code Yes
Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 130 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 4.5 A Drain-source On Resistance-Max 0.95 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 13.5 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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