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See Technical Specifications

SPD03N60C3

N-Channel 650 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11

Manufacturer:

INFINEON
Mfr.Part #:

SPD03N60C3
Datasheet:

SPD03N60C3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for SPD03N60C3

Email: [email protected]

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SPD03N60C3 General Description

N-Channel 650 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11

Key Features

New revolutioanary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
Pb-free lead plaing; RoHS compliant
Qualified according to JEDEC for target applications.

Specifications

Source Content uid	SPD03N60C3	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	100 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	3.2 A
Drain-source On Resistance-Max	1.4 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	38 W	Pulsed Drain Current-Max (IDM)	9.6 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	3.2 A
Rds On - Drain-Source Resistance	1.4 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	38 W	Channel Mode	Enhancement
Tradename	CoolMOS	Series	CoolMOS C3
Fall Time	12 ns	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	3 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	64 ns	Typical Turn-On Delay Time	7 ns
Width	6.22 mm	Part # Aliases	SP000308772 SPD3N6C3XT SPD03N60C3BTMA1
Unit Weight	0.011640 oz