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See Technical Specifications

SPD02N50C3

Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R

Manufacturer:

Infineon Technologies
Mfr.Part #:

SPD02N50C3
Datasheet:

SPD02N50C3 Datasheet (PDF)
Series:

CoolMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

560 V
EDA/CAD Models:

Request Free CAD Models for SPD02N50C3

Email: [email protected]

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Tel: +852 95804164

SPD02N50C3 General Description

Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3

Key Features

Static drain-source on-resistance:
RDS(on)≤3Ω
Enhancement mode:
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation

Specifications

Series	CoolMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	560 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 1.1A, 10V	Vgs(th) (Max) @ Id	3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 25 V	Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SPD02N