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See Technical Specifications

SPB11N60C3

N-Channel 650 V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

Manufacturer:

INFINEON
Mfr.Part #:

SPB11N60C3
Datasheet:

SPB11N60C3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for SPB11N60C3

Email: [email protected]

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Tel: +852 95804164

SPB11N60C3 General Description

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Specifications

Source Content uid	SPB11N60C3	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	340 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	600 V
Drain Current-Max (ID)	11 A	Drain-source On Resistance-Max	0.38 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	125 W	Pulsed Drain Current-Max (IDM)	33 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	11 A	Rds On - Drain-Source Resistance	380 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.1 V
Qg - Gate Charge	45 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	125 W
Channel Mode	Enhancement	Tradename	CoolMOS
Series	CoolMOS C3	Fall Time	5 ns
Forward Transconductance - Min	8.3 S	Height	4.4 mm
Length	10 mm	Product Type	MOSFET
Rise Time	5 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	44 ns	Typical Turn-On Delay Time	10 ns
Width	9.25 mm	Part # Aliases	SP000013519 SPB11N6C3XT SPB11N60C3ATMA1
Unit Weight	0.139332 oz