This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SIR826DP-T1-GE3

MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SIR826DP-T1-GE3
Datasheet:

SIR826DP-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

80 V
EDA/CAD Models:

Request Free CAD Models for SIR826DP-T1-GE3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SIR826DP-T1-GE3 General Description

Power Field-Effect Transistor, 60A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Key Features

Halogen-free According to IEC 61249-2-21 Definition
TrenchFET®Power MOSFET
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 40 V	Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SIR826