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SIR681DP-T1-RE3

French Electronic Distributor since 1988

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

SIR681DP-T1-RE3 General Description

P-Channel 80 V 17.6A (Ta), 71.9A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Key Features

  • TrenchFET® Gen IV p-channel power MOSFET
  • Very low RDS(on) minimizes voltage drop and reduces conduction loss
  • Eliminates the need for charge pump
  • 100 % Rg and UIS tested

    • Specifications

    Series TrenchFET® Gen IV FET Type P-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V
    Current - Continuous Drain (Id) @ 25°C 17.6A (Ta), 71.9A (Tc) Rds On (Max) @ Id, Vgs 11.2mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
    Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 40 V
    Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount Base Product Number SIR681

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