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SIR664DP-T1-GE3

N-Channel 60 V 60A (Tc) Surface Mount PowerPAK® SO-8

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SIR664DP-T1-GE3 General Description

N-Channel 60 V 60A (Tc) Surface Mount PowerPAK® SO-8

Key Features

  • TrenchFET® Gen IV power MOSFET
  • 100 % Rg and UIS tested
  • Optimized for high-side switching in synchronous buck converters
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Specifications

Series TrenchFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 30 V Mounting Type Surface Mount
Base Product Number SIR664

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