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SIR500DP-T1-RE3

Trans MOSFET N-CH 30V 85.9A T/R

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SIR500DP-T1-RE3 General Description

N-Channel 30 V 85.9A (Ta), 350.8A (Tc) 6.25W (Ta), 104.1W (Tc) Surface Mount PowerPAK® SO-8

Key Features

  • TrenchFET® Gen V power MOSFET
  • Very low RDS x Qg figure-of-merit (FOM)
  • Enables higher power density with very low RDS(on) and thermally enhanced compact package
  • 100 % Rg and UIS tested

    • Specifications

    Series TrenchFET® Gen V FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
    Current - Continuous Drain (Id) @ 25°C 85.9A (Ta), 350.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
    Rds On (Max) @ Id, Vgs 0.47mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V Vgs (Max) +16V, -12V
    Input Capacitance (Ciss) (Max) @ Vds 8960 pF @ 15 V Power Dissipation (Max) 6.25W (Ta), 104.1W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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