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SIHP33N60E-GE3

MOSFET 600V Vds 30V Vgs TO-220AB

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SIHP33N60E-GE3
Datasheet:

SIHP33N60E-GE3 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

600 V
Current - Continuous Drain (Id) @ 25°C:

33A (Tc)
EDA/CAD Models:

Request Free CAD Models for SIHP33N60E-GE3

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SIHP33N60E-GE3 General Description

Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Key Features

Low figure-of-merit (FOM): Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Application

oServer and telecom power supplies
oSwitch mode power supplies (SMPS)
oPower factor correction power supplies (PFC)
oLighting
oHigh-intensity discharge (HID)
oFluorescent ballast lighting
oIndustrial
oWelding
oInduction heating
oMotor drives
oBattery chargers
oRenewable energy
oSolar (PV inverters)

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	3508 pF @ 100 V
Power Dissipation (Max)	278W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	SIHP33