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SIHP22N60E-GE3

E Series Power MOSFET

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SIHP22N60E-GE3 General Description

N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole

Key Features

  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)

    • Application

    • oServer and telecom power supplies
    • oSwitch mode power supplies (SMPS)
    • oPower factor correction power supplies (PFC)
    • oLighting
    • oHigh-intensity discharge (HID)
    • oFluorescent ballast lighting
    • oIndustrial
    • oWelding
    • oInduction heating
    • oMotor drives
    • oBattery chargers
    • oRenewable energy
    • oSolar (PV inverters)

    Specifications

    Series E FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V Vgs (Max) ±30V
    Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V Power Dissipation (Max) 227W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
    Base Product Number SIHP22

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    Availability: 6094 PCS

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    Qty. Unit Price Ext. Price
    1+ $2.688 $2.69
    10+ $2.632 $26.32
    30+ $2.595 $77.85
    100+ $2.557 $255.70

    The prices below are for reference only.

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