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SI7655DN-T1-GE3

P-Channel 20 V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI7655DN-T1-GE3
Datasheet:

SI7655DN-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

20 V
EDA/CAD Models:

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SI7655DN-T1-GE3 General Description

P-Channel 20 V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Key Features

TrenchFET® Power MOSFET |Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile |100 % R and UIS Tested |Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Application

Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Load Switch G

Specifications

Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V	Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	225 nC @ 10 V	Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	6600 pF @ 10 V	Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI7655