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SI7635DP-T1-GE3 +BOM
SI7635DP-T1-GE3 P-channel MOSFET Transistor; 21 A; 20 V; 8-Pin PowerPAK SO
PowerPAK®SO-8-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI7635DP-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
20 V
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EDA/CAD Models:
Availability: 8996 PCS
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SI7635DP-T1-GE3 General Description
P CHANNEL MOSFET, -40V, 40A; Transistor; P CHANNEL MOSFET, -40V, 40A; Transistor Polarity:P Channel; Continuous Drain Current Id:-40A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-2.2V; No. of Pins:8
Key Features
- ♦ +4.5V to +20V Supply to -4.5V to -20V Output
- ♦ Cascaded Voltage Multiplication (VOUT = -n x V+)
- ♦ 99.7% Typical Open Circuit Conversion Efficiency
- ♦ Requires Only 2 External Capacitors
- ♦ Pin Compatible with the ICL7660
Specifications
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 26A, 10V | Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V | Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 4595 pF @ 10 V | Power Dissipation (Max) | 5W (Ta), 54W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI7635 |
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In Stock: 8,996
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $2.215 | $2.22 |
10+ | $2.170 | $21.70 |
30+ | $2.138 | $64.14 |
100+ | $2.107 | $210.70 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI7635DP-T1-GE3, guaranteed quotes back within 12hr.
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