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SI7386DP-T1-E3
N-Channel 30 V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
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Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI7386DP-T1-E3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30 V
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EDA/CAD Models:
Availability: 7491 PCS
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SI7386DP-T1-E3 General Description
N-Channel 30 V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Specifications
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7mOhm @ 19A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V | Vgs (Max) | ±20V |
Power Dissipation (Max) | 1.8W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI7386 |
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Availability: 7491 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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