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SI7172DP-T1-GE3
Single N-Channel 200 V 0.07 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
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Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI7172DP-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200 V
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EDA/CAD Models:
Availability: 9629 PCS
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SI7172DP-T1-GE3 General Description
Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:25A; On Resistance Rds(On):0.076Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: No
Key Features
- TrenchFET® power MOSFET,Low thermal resistance PowerPAK® package,100 % Rg and UIS tested
Application
Primary Side Switch |Industrial DSpecifications
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 70mOhm @ 5.9A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 100 V | Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI7172 |
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Availability: 9629 PCS
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