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SI6463BDQ-T1-GE3

MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3

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SI6463BDQ-T1-GE3 General Description

P-Channel 20 V 6.2A (Ta) Surface Mount 8-TSSOP

Key Features

  • –8.8 A, –20 V. RDS(ON) = 0.0125 Ω @ VGS = –4.5 V
  • RDS(ON) = 0.018 Ω @ VGS = –2.5 V
  • Extended VGSS range (±12V) for battery applications
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • Low profile TSSOP-8 package

Specifications

Series TrenchFET® FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) Rds On (Max) @ Id, Vgs 15mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 60 nC @ 5 V
Mounting Type Surface Mount Base Product Number SI6463

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