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SI4800BDY-T1-E3

MOSFET 30V 9A 2.5W

  • Manufacturer:

    Vishay Siliconix

  • Mfr.Part #:

    SI4800BDY-T1-E3

  • Datasheet:

    SI4800BDY-T1-E3 Datasheet (PDF) pdf-icon

  • Series:

    TrenchFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

email Email: [email protected]
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tel Tel: +852 95804164

SI4800BDY-T1-E3 General Description

N-Channel 30 V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Key Features

  • None

    • Application

    SWITCHING

    Specifications

    Series TrenchFET® FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
    Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
    Rds On (Max) @ Id, Vgs 18.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V Vgs (Max) ±25V
    Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount Base Product Number SI4800

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