This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI4463BDY-T1-E3

P-Channel 20 V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI4463BDY-T1-E3
Datasheet:

SI4463BDY-T1-E3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

20 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI4463BDY-T1-E3 General Description

Small Signal Field-Effect Transistor, 9.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8

Key Features

Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg Tested
Built in ESD Protection with Zener Diode
Typical ESD Performance: 1800 V
Compliant to RoHS Directive 2002/95/EC

Specifications

Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	9.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 13.7A, 10V	Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 4.5 V	Vgs (Max)	±12V
Power Dissipation (Max)	1.5W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI4463