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SI4154DY-T1-GE3

MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Source Voltage Vds:40V; On Resistance

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI4154DY-T1-GE3
Datasheet:

SI4154DY-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

40 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI4154DY-T1-GE3 General Description

MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 7.8W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Key Features

TrenchFET® power MOSFET,100 % Rg and UIS tested

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.3mOhm @ 15A, 10V	Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4230 pF @ 20 V	Power Dissipation (Max)	3.5W (Ta), 7.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI4154