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SI3493BDV-T1-GE3 +BOM
P-Channel 20 V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
SOT-23-6Thin,TSOT-23-6-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI3493BDV-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
20 V
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EDA/CAD Models:
Availability: 9782 PCS
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SI3493BDV-T1-GE3 General Description
P-Channel 20 V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
Key Features
- Quad-Port Power Sourcing Equipment (PSE) controller
- IEEE 802.3at Type I and II compliant
- Port priority shutdown control
- Adds enhanced features for maximum design flexibility:
- Per-port current and voltage monitoring
- PoE Plus support with programmable current limits
- Multi-point detection
- Programmable power MOSFET gate drive control
- Configurable watchdog timer enables failsafe operation
- Maskable interrupt pin
- Comprehensive fault protection circuitry includes:
- Power undervoltage lockout
- Output current limit and short circuit protection
- Thermal overload detection
- Supports pin-selectable AUTO mode
- Extended operating temp range: –40 to +85 °C
- 5x7 mm 38-pin QFN package (RoHS-compliant)
- On-chip dc-dc converter enables single-rail power operation
Application
Load Switch |PA Switch |Battery SwitchSpecifications
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 27.5mOhm @ 7A, 4.5V | Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43.5 nC @ 5 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1805 pF @ 10 V | Power Dissipation (Max) | 2.08W (Ta), 2.97W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI3493 |
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In Stock: 9,782
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