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SI3445ADV-T1-E3 +BOM
MOSFET RECOMMENDED ALT 781-SI3433CDV-GE3
SOT-23-6Thin,TSOT-23-6-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI3445ADV-T1-E3
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Datasheet:
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
8 V
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Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
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EDA/CAD Models:
Availability: 6623 PCS
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SI3445ADV-T1-E3 General Description
P-Channel 8 V 4.4A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Key Features
- –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V
- RDS(ON) = 43 mΩ @ VGS = –2.5 V
- RDS(ON) = 60 mΩ @ VGS = –1.8 V
- Fast switching speed.
- High performance trench technology for extremely
- low RDS(ON)
Specifications
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8 V | Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | Rds On (Max) @ Id, Vgs | 42mOhm @ 5.8A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
Vgs (Max) | ±8V | Power Dissipation (Max) | 1.1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI3445 |
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In Stock: 6,623
Minimum Order: 1
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