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SI3434DV-T1-E3 +BOM
MOSFET RECOMMENDED ALT 781-SI3410DV-GE3
SOT-23-6Thin,TSOT-23-6-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI3434DV-T1-E3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
30 V
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EDA/CAD Models:
Availability: 9688 PCS
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SI3434DV-T1-E3 General Description
N-Channel 30 V 4.6A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
Specifications
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 34mOhm @ 6.1A, 4.5V | Vgs(th) (Max) @ Id | 600mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V | Vgs (Max) | ±12V |
Power Dissipation (Max) | 1.14W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI3434 |
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In Stock: 9,688
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