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SI3127DV-T1-GE3 +BOM

Field-effect transistor with -60 volts Vds and 20 volts Vgs housed in a TSOP-6 package

Manufacturer:

Vishay
Mfr.Part #:

SI3127DV-T1-GE3
Datasheet:

SI3127DV-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI3127DV-T1-GE3

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SI3127DV-T1-GE3 General Description

Small Signal Field-Effect Transistor, 5.1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

Key Features

TrenchFET® power MOSFET 100 % Rg and UIS tested

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	5.1 A	Rds On - Drain-Source Resistance	146 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	30 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	4.2 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI3	Configuration	Single
Height	1.1 mm	Length	3.05 mm
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Width	1.65 mm
Unit Weight	0.000705 oz