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SI2343DS-T1-E3

Single P-Channel 30 V 0.053 Ohms Surface Mount Power Mosfet - SOT-23

Manufacturer:

VISHAY SILICONIX
Mfr.Part #:

SI2343DS-T1-E3
Datasheet:

SI2343DS-T1-E3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2343DS-T1-E3

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SI2343DS-T1-E3 General Description

P CHANNEL MOSFET, -30V, 4A, TO-236; Tran; P CHANNEL MOSFET, -30V, 4A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; No. of Pins:3

Specifications

Product Category:	MOSFET	Technology:	Si
Mounting Style:	SMD/SMT	Transistor Polarity:	P-Channel
Number of Channels:	1 Channel	Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	3.1 A	Rds On - Drain-Source Resistance:	53 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	14 nC	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Pd - Power Dissipation:	750 mW
Channel Mode:	Enhancement	Tradename:	TrenchFET
Series:	SI2	Packaging:	MouseReel
Configuration:	Single	Fall Time:	20 ns
Product Type:	MOSFET	Rise Time:	15 ns
Factory Pack Quantity:	3000	Subcategory:	MOSFETs
Transistor Type:	1 P-Channel	Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	10 ns	Part # Aliases:	SI2343DS-T1-BE3 SI2343DS-E3
Unit Weight:	0.000282 oz