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SI2324DS-T1-GE3
MOSFET 100V Vds 20V Vgs SOT-23
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Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI2324DS-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100 V
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EDA/CAD Models:
Availability: 6107 PCS
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SI2324DS-T1-GE3 General Description
N-Channel 100 V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Key Features
Application
DC/DC Converters |Load Switch |LED Backlighting in LCD TVsSpecifications
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 234mOhm @ 1.5A, 10V | Vgs(th) (Max) @ Id | 2.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 50 V | Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI2324 |
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[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 6107 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.306 | $0.31 |
10+ | $0.266 | $2.66 |
30+ | $0.249 | $7.47 |
100+ | $0.227 | $22.70 |
500+ | $0.217 | $108.50 |
1000+ | $0.212 | $212.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI2324DS-T1-GE3, guaranteed quotes back within 12hr.