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SI2318DS-T1-BE3
MOSFET N-CHANNEL 40-V (D-S)
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Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI2318DS-T1-BE3
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
40 V
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Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
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EDA/CAD Models:
Availability: 7386 PCS
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SI2318DS-T1-BE3 General Description
N-Channel 40 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Specifications
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 20 V |
Power Dissipation (Max) | 750mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
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Availability: 7386 PCS
+BOMQty. | Unit Price | Ext. Price |
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