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SI2304BDS-T1-E3

MOSFET with a voltage rating of 30V, a current rating of 3.2A, and a resistance of 0.07Ohm

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SI2304BDS-T1-E3 General Description

N-Channel 30 V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

Halogen-free According to IEC 61249-2-21 Definition |TrenchFET® Power MOSFET |100 % R g Tested |Compliant to RoHS Directive 2002/95/EC

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2.6 A Rds On - Drain-Source Resistance 70 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 2.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 750 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Configuration Single
Fall Time 15 ns Forward Transconductance - Min 6 S
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 12.5 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 7.5 ns Width 1.6 mm
Part # Aliases SI2304BDS-T1-BE3 SI2304BDS-E3 Unit Weight 0.000282 oz

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