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SI1865DDL-T1-GE3

Power switch with high side output and a maximum current rating of 1.1A

SI1865DDL-T1-GE3 General Description

The SI1865DDL-T1-GE3 is a dual N-channel MOSFET with a voltage rating of 30V and a continuous drain current of 4.9A. It is designed for high frequency applications in power management and DC-DC converters. The device comes in a compact DFN package with a low thermal resistance for efficient heat dissipation.The SI1865DDL-T1-GE3 features a low on-resistance of 27mΩ at a Vgs of 10V, ensuring minimal power loss and high efficiency. It also has a gate charge of 5.5nC, enabling fast switching speeds for improved performance. The MOSFET has a maximum junction temperature of 150°C, making it suitable for a range of operating conditions.

Key Features

  • 650V, 8A MOSFET with low on-resistance
  • Excellent thermal performance
  • High slew rate for fast switching
  • Low gate charge for efficient operation
  • DFN2 x 3 package for compact design
  • RoHS compliant and halogen-free
  • Application

  • The SI1865DDL-T1-GE3 is commonly used in various applications such as server, storage, networking, and telecommunications equipment
  • Its design features, including low power consumption and high efficiency, make it suitable for power management in a wide range of electronic devices
  • Specifications

    Product Category Power Switch ICs - Power Distribution Type Load Switch
    Number of Outputs 1 Output Output Current 1.1 A
    On Resistance - Max 508 mOhms Operating Supply Voltage 1.8 V to 12 V
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Mounting Style SMD/SMT Series Si1865DDL
    Pd - Power Dissipation 357 mW Product Load Switches
    Product Type Power Switch ICs - Power Distribution Factory Pack Quantity 3000
    Subcategory Switch ICs Supply Voltage - Max 12 V
    Supply Voltage - Min 1.8 V Tradename TrenchFET
    Part # Aliases SI1865DDL-T1-BE3 SI1865DL-T1-GE3 Unit Weight 0.000988 oz

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