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See Technical Specifications

SI1032X-T1-GE3

MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI1032X-T1-GE3
Datasheet:

SI1032X-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

20 V
EDA/CAD Models:

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SI1032X-T1-GE3 General Description

N-Channel 20 V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3

Key Features

LOW THRESHOLD

Application

["Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories ", "Battery Operated Systems ", "Power Supply Converter Circuits ", "Load/Power Switching Cell Phones, Pagers"]

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)	Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	5Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.75 nC @ 4.5 V	Vgs (Max)	±6V
Power Dissipation (Max)	300mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI1032