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See Technical Specifications

SI1021R-T1-GE3

Trans MOSFET P-CH 60V 0.19A 3-Pin SC-75A T/R

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SI1021R-T1-GE3
Datasheet:

SI1021R-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

60 V
EDA/CAD Models:

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SI1021R-T1-GE3 General Description

MOSFET, P CH, -60V, -0.19A, SOT-416; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:250mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-416; No. of Pins:3; MSL:-

Key Features

None

Application

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. |Battery Operated Systems |Power Supply Converter Circuits |Solid-State Relays

Specifications

Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 15 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	23 pF @ 25 V	Power Dissipation (Max)	250mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SI1021