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SI1013X-T1-GE3 +BOM
French Electronic Distributor since 1988
SC-89,SOT-490-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI1013X-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
20 V
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EDA/CAD Models:
Availability: 7155 PCS
Please fill in the short form below and we will provide you the quotation immediately.
SI1013X-T1-GE3 General Description
Engineers and manufacturers looking for a reliable P CHANNEL MOSFET with a compact SC-89 package and excellent performance characteristics will find the SI1013X-T1-GE3 to be a valuable component for their designs. Its low threshold voltage and high on resistance make it a versatile choice for a wide range of applications, from consumer electronics to industrial equipment
Specifications
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V | Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V | Vgs (Max) | ±6V |
Power Dissipation (Max) | 250mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI1013 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,155
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.126 | $0.13 |
10+ | $0.103 | $1.03 |
30+ | $0.091 | $2.73 |
100+ | $0.083 | $8.30 |
500+ | $0.076 | $38.00 |
1000+ | $0.073 | $73.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI1013X-T1-GE3, guaranteed quotes back within 12hr.
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